Precision Improvement in Optical Proximity Correction by Optimizing Second Illumination Source Shape
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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Kamon Kazuya
Ulsi Laboratory Mitsubishi Electric Corporation
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Kamon Kazuya
Ulsi Laboratory Mitsubishi Electric Corp.
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Nakao Shuji
Ulsi Laboratory Mitsubishi Electric Corporation
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Nakae Akihiro
Ulsi Laboratory Mitsubishi Electric Corporation
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MORIIZUMI Koichi
Manufacturing Technology Division, Mitsubishi Electric Corporation
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HANAWA Tetsuro
ULSI Laboratory, Mitsubishi Electric Corporation
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Hanawa Tetsuro
Ulsi Laboratory Mitsubishi Electric Corporation
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Moriizumi Koichi
Manufacturing Technology Mitsubishi Electric Corporation
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Moriizumi Koichi
Manufacturing Technology Division Mitsubishi Electric Corporation
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Nakae Akihiro
ULSI Development Center, Mitsubishi Electric Corporation
関連論文
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- A Fast Eliminating System of Narrow Electron-Beam Exposure-Figures for Improving Pattern Accuracy
- Effect of Lens Aberration on Resist Pattern Profiles in Edge-Line Phase-Shift Method
- 0.10 μm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light
- Simple Method for Resist Critical Dimension Prediction
- Measurement of Spherical Aberration Utilizing an Alternating Phase Shift Mask
- Imaging Characteristics of 0.12 μm Dynamic Random Access Memory Pattern by KrF Excimer Laser Lithography
- Impact of Spherical Aberrations on Printing Characteristics of Irregularly Aligned Patterns of Alternating Phase Shift Mask
- Measurement Method for Odd Component of Aberration Function Utilizing Alternating Phase Shift Mask
- Quantitative Measurement of the Ray Shift Aspect of Coma Aberration Utilizing Electrical Probe with Zero-Crossing Method
- 単層ハ-フト-ン型位相シフトマスクによるリソグラフィ-特性〔英文〕
- Precision Improvement in Optical Proximity Correction by Optimizing Second Illumination Source Shape