Imaging Characteristics of 0.12 μm Dynamic Random Access Memory Pattern by KrF Excimer Laser Lithography
スポンサーリンク
概要
- 論文の詳細を見る
Imaging characteristics of a 0.12 μm dynamic random access memory (DRAM) cell pattern by KrF excimer laser lithography are investigated by optical image calculations. Using modified illuminations optimized for specific patterns and an attenuating phase shift mask (atten-PSM), depth of focus (DOF) can be achieved up to 〜0.8 μm with high numerical aperture (NA) of 0.70-0.75. However, the image quality is significantly degraded by lens aberration of 〜0.06λ in root-mean-square optical pass difference (RMS-OPD), which is observed in a stepper for 0.25 μm generation devices. Accordingly, the development of a low aberration lens is necessary to realize 0.12 μm DRAM cell pattern formation by KrF excimer laser lithography.
- 社団法人応用物理学会の論文
- 1999-12-30
著者
-
Nakao S
National Industrial Research Institute Of Nagoya
-
Nakao Shuji
Ulsi Laboratory Mitsubishi Electric Corporation
-
Tsujita K
Technology Development Division Victor Company Of Japan Limited
-
Tsujita Kouichirou
Ulsi Laboratory Mitsubishi Electric Corporation:ulsi Technology Development Center
-
Wakamiya W
Ulsi Development Center Mitsubishi Electric Corporation
-
Wakamiya Wataru
Ulsi Laboratory Mitsubishi Electric Corporation
-
ARIMOTO Ichirou
ULSI Development Center, Mitsubishi Electric Corporation
-
Arimoto Ichirou
Ulsi Development Center Mitsubishi Electric Corporation
-
Wakamiya Wataru
ULSI Development Center, Mitsubishi Electric Corporation
関連論文
- Orientation of Vanadyl Phthalocyanine Grown by Molecular Beam Epitaxy on KBr-KCl Mixed Crystals with Various Lattice Constants
- Proposal of a Next-Generation Super Resolution Technique
- Growth by Molecular Beam Epitaxy of Vanadyl Phthalocyanine on Alkali-Substituted Alkali-Halide Mixed Crystal Substrates
- Two-Step Epitaxial Growth of Vanadyl-Phthalocyanine on Alkali-Halide Substrates
- Molecular Orbital Study of the Adsorption of Chloroaluminum Phthalocyanine on a NaCl (100) Surface
- Influence of Lattice Misfit on Surface Morphology of Vanadyl-Phthalocyanine Molecular Beam Epitaxy Films Grown on KCI/KBr Mixed-Crystal Substrates
- Lattice Matching and Relaxation of Vanadyl-Phthalocyamine Crystal Epitaxially Growm on Mixed Crystals of Alkali Halides
- Characterization of Neutron Elastic Recoil Detection Analysis with Low-Energy Neutron Beams
- Annealing of Silica Glasses Implanted with High-Energy Copper Ions
- Effect of High-Energy Carbon Ion Irradiation in Aligned and Random Directions on Microstructure of (111) Au Films
- Damage Production and Reduction of Single-Crystalline TiN Films by 1.8 MeV Carbon Beam Irradiation
- Grating Polarizing Beam-Splitter Using Oriented Polydiacetylene Thin Film
- Electron Beam Direct Writing Techniques for the Development of Sub-Quarter-Micron Devices
- Improvement of Dry Etching Resistance of Resists by Deep UV Cure
- Practical Properties of Thermochromically Induced Super-Resolution Read-Only Memory Disk (TSR-ROM)
- Thermochromic Super-Resolution in Phase-Change Rewritable Disk with Double Mask Layer
- Hydrogen-Etching Effect of Substrate on Deposition of Diamond Films by DC Plasma Chemical Vapor Deposition
- Effect of Discharge Current on the Microstructure of Diamond Films Deposited on Aluminum Substrate at Low Substrate Temperature by DC Plasma CVD
- Deposition of Diamond onto an Aluminum Substrate by DC Plasma CVD
- 0.10 μm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light
- Simple Method for Resist Critical Dimension Prediction
- Measurement of Spherical Aberration Utilizing an Alternating Phase Shift Mask
- Super-Resolution Rewritable Optical Disk Having a Mask Layer Composed of Thermo-Chromic Organic Dye
- Imaging Characteristics of 0.12 μm Dynamic Random Access Memory Pattern by KrF Excimer Laser Lithography
- Impact of Spherical Aberrations on Printing Characteristics of Irregularly Aligned Patterns of Alternating Phase Shift Mask
- Measurement Method for Odd Component of Aberration Function Utilizing Alternating Phase Shift Mask
- Quantitative Measurement of the Ray Shift Aspect of Coma Aberration Utilizing Electrical Probe with Zero-Crossing Method
- Refractive Index Distribution in Photoresist Thin Film Formed by the Spin Coating Method
- Adhesion Improvement of Photoresist on TiN/Al Multilayer by Ozone Treatment
- 単層ハ-フト-ン型位相シフトマスクによるリソグラフィ-特性〔英文〕
- Effect of Phase Error on Lithographic Characteristics Using Attenuated Phase-Shifting Mask
- Precision Improvement in Optical Proximity Correction by Optimizing Second Illumination Source Shape