単層ハ-フト-ン型位相シフトマスクによるリソグラフィ-特性〔英文〕
スポンサーリンク
概要
著者
-
Nakae A
Ulsi Development Center Mitsubishi Electric Corporation
-
Nakae Akihiro
Ulsi Laboratory Mitsubishi Electric Corporation
-
Wakamiya W
Ulsi Development Center Mitsubishi Electric Corporation
-
Wakamiya Wataru
Ulsi Laboratory Mitsubishi Electric Corporation
-
Miyazaki J
Mitsubishi Electric Corp. Hyogo Jpn
-
Miyazaki Junji
Ulsi Development Center Mitsubishi Electric Corporation
-
HANAWA Tetsuro
ULSI Laboratory, Mitsubishi Electric Corporation
-
YOSHIOKA Nobuyuki
ULSI Laboratory, Mitsubishi Electric Corporation
-
Yoshioka N
Shizuoka Univ. Hamamatsu Jpn
-
Hanawa Tetsuro
Ulsi Laboratory Mitsubishi Electric Corporation
-
宮崎 順二
ULSI Laboratory, Mitsubishi Electric Corporation
-
Nakae Akihiro
ULSI Development Center, Mitsubishi Electric Corporation
-
Wakamiya Wataru
ULSI Development Center, Mitsubishi Electric Corporation
関連論文
- Proposal of a Next-Generation Super Resolution Technique
- X-Ray Mask Fabrication Process Using Cr Mask and ITO Stopper in the Dry Etching of W Absorber
- Organotin-Containing Resists (TMAR) for X-Ray Lithography : Resist Material and Process
- Organotin-Containing Resists (TMAR) for X-Ray Lithography
- Sputtered W-Ti Film for X-Ray Mask Absorber
- Fabrication of 0.25-μm Pattern on a Membrane Substrate-Based X-Ray Absorber : X-Ray Lithography
- Fabrication of 0.25-μm Patterns on a Membrane Substrate-Based X-Ray Absorber
- 0.10 μm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light
- Simple Method for Resist Critical Dimension Prediction
- Measurement of Spherical Aberration Utilizing an Alternating Phase Shift Mask