Magnetization Process of Haldane Materials TMNIN and NINAZ
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概要
- 論文の詳細を見る
Magnetization mea:surements have been performed on the Haldane gap materials(CH.).NNi(NO.), (TMNIN) and Ni(C.H..N.).N,(CIO.) (NINAZ) in pulsed highmagnetic fields. TMI'JIN shows a typical magnetization profile of the Haldautematerial with the gap energy of 4.1 K. Quenclting of the gap appears around 2.7Tesla(T) and magnetic saturation is obtained above 30 T. In NINAZ, however, tlaequenching appears at around 30 T reflecting a large Haldane gap energy with themagnitude of 44.3 K.[magnetization,l (CH3)4NN1(N02)3? Nl(C3H10N2)2N3CI04-lixaear-chain I-Ieisenbergantiferromagnet,l-Ialdane gap,
- 社団法人日本物理学会の論文
- 1992-09-15
著者
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吉田 健
福岡工業大学情報システム工学科
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勝又 紘一
Riken Spring-8 Center Harima Institute
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伊達 宗行
Department Of Physics Faculty Of Science Osaka University
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DATE Muneyuki
Department of Physics, Faculty of Science, Osaka University
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YAMAGISHI Akio
Research Center for Extreme Materials, Osaka University
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HORi Hidenobu
Department of Physics, Faculty of Science, Osaka University
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TAKEUCHI Tetsuya
Department of Physics,Faculty of Science,Osaka University
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YOSIDA Taturu
Low Temperature Center,Osaka University
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KATSUMATA Koichi
The Institute of Physical and Chemical Research (RIKEN)
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RENARD Jean-Pierre
Institute d'Electronique Fondamentale
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GADET Veronique
Laboratoire de Chimie des Metaux de Transition,Universite
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VERDAGUER Michel
Laboratoire de Chimie des Metaux de Transition,Universite
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Date Muneyuki
Advanced Science Research Center Jaeri Tokai
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竹内 徹也
大阪大 低温セ
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Renard J‐p
Univ. Paris‐sud Orsay Fra
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Hori Hidenobu
Department Of Material Science Japan Advanced Institute Of Science And Technology (jaist)
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Yoshida Tatsuo
Department Of Physics Hokkaido University
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Tatsuo Yoshida
Department Of Physics Ibaraki University
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Date Muneyuki
Graduate School Of Science Osaka University
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Yamagishi A
Osaka Univ. Toyonoka
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Yamagishi Akio
Research Center Of Extreme Materials Osaka University
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Yamagishi Akio
Research Center For Extreme Materials Osaka University
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Yosida Taturu
Low Temperature Center Osaka University
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Takeuchi Tetsuya
Department Of Electrical And Electronic Engineering Meijo University
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Verdaguer Michel
Laboratoire De Chimie Des Metaux De Transition Universite
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Gadet Veronique
Laboratoire De Chimie Des Metaux De Transition Universite
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Renard Jean-pierre
Institut D' Electronique Fundamentale
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Hori H
School Of Material Science Japan Advanced Institute Of Science And Technology
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Hori H
Osaka Univ. Osaka
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Date Muneyuki
Department Of Physics Faculity Of Science Osaka University
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Katsumata Koichi
The Institute Of Physical And Chemical Research
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RENARD Jean-Pierre
Institut d'Electronique Fondamentale, Batiment 220, Universityersite Paris-Sud
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HORI Hidenobu
Department of Physics, Osaka University
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RENARD Jean-Pierre
Institute d'Electronique Fondamentale
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YOSHIDA Tatsuo
Faculty of Science, Ibaraki University
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YOSHIDA Tatsuo
Faculty of Sciences, Ibaraki University
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Hori Hidenobu
Department of Electrical and Electonic Engineering, Toyohashi University of Technology
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YOSHIDA Toshihiro
Department of Physics, Faculty of Education, Fukushima University
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YOSHIDA Toshihiro
Department of Physics, Faculty of Education Fukushima University
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YOSHIDA Takeshi
Department of Physics, Kyusyu University
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