SUGIMOTO Masahiro | Toyota Motor Corp.
スポンサーリンク
概要
関連著者
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SUGIMOTO Masahiro
Toyota Motor Corp.
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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Hayashi Eiko
Toyota Central R&d Laboratories Inc.
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Ishiguro Osamu
Toyota Central R&d Laboratories Inc.
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Soejima Narumasa
Toyota Central R&d Laboratories Inc.
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Kanechika Masakazu
Toyota Central R&d Laboratories Inc.
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Itoh Kenji
Toyota Central R&d Laboratories Inc.
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Ueda Hiroyuki
Toyota Central R&d Laboratories Inc.
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Kodama Masahito
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
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Kachi Tetsu
Toyota Central R&D Labs., Inc.
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Uesugi Tsutomu
Toyota Central R&d Labs. Inc.
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Kato M
Toyota Central R&d Laboratories Inc.
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Kachi Tetsu
Toyota Central R&d Laboratories Inc.
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Kato M
Japan Atomic Energy Res. Inst. Ibaraki Jpn
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Kato Masatsune
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Ohno Yasuo
Institute Of Technology And Science The University Of Tokushima
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Hu Cheng-yu
Institute Of Technology And Science The University Of Tokushima
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KODAMA Masahito
Toyota Central R&D Laboratories, Inc.
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HAYASHI Eiko
Toyota Central R&D Laboratories, Inc.
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SOEJIMA Narumasa
Toyota Central R&D Laboratories, Inc.
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ISHIGURO Osamu
Toyota Central R&D Laboratories, Inc.
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KANECHIKA Masakazu
Toyota Central R&D Laboratories, Inc.
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ITOH Kenji
Toyota Central R&D Laboratories, Inc.
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UEDA Hiroyuki
Toyota Central R&D Laboratories, Inc.
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Nakatani Katsutoshi
Institute Of Technology And Science The University Of Tokushima
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Jin-Ping Ao
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Ohmuro Keisuke
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Sogawa Yuji
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Katsutoshi Nakatani
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Yuji Sogawa
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Keisuke Ohmuro
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Hayashi Eiko
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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Soejima Narumasa
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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Kanechika Masakazu
TOYOTA Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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Masahiro Sugimoto
Toyota Motor Corp., 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan
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Sugimoto Masahiro
Toyota Motor Corp., 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan
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Ishiguro Osamu
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
著作論文
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
- A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor