Hu Cheng-yu | Institute Of Technology And Science The University Of Tokushima
スポンサーリンク
概要
関連著者
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AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
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Ohno Yasuo
Institute Of Technology And Science The University Of Tokushima
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Hu Cheng-yu
Institute Of Technology And Science The University Of Tokushima
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Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
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HU Cheng-Yu
Institute of Technology and Science, The University of Tokushima
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OHNO Yasuo
Institute of Technology and Science, The University of Tokushima
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
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Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
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Hu Cheng‐yu
Univ. Tokushima Tokushima Jpn
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OKADA Masaya
Institute of Technology and Science, The University of Tokushima
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KAWAI Hiroji
Powdec K.K
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岡田 政也
徳島大学ソシオテクサイエンス研究部
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Okada Masaya
Univ. Tokushima Tokushima‐shi Jpn
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Okada Masaya
Institute Of Technology And Science The University Of Tokushima
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Nakatani Katsutoshi
Institute Of Technology And Science The University Of Tokushima
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Ikawa Yusuke
Institute Of Technology And Science The University Of Tokushima
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Okada Masaya
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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YAMAOKA Yuya
Institute of Technology and Science, The University of Tokushima
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NAKATANI Katsutoshi
Institute of Technology and Science, the University of Tokushima
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Shinohara Naoki
Research Institute For Sustainable Humanosphere Kyoto University
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SUGIMOTO Masahiro
Toyota Motor Corp.
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Yamaoka Yuya
Institute Of Technology And Science The University Of Tokushima
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IKAWA Yusuke
Institute of Technology and Science, the University of Tokushima
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YUASA Yorihide
Institute of Technology and Science, the University of Tokushima
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Yuasa Yorihide
Institute Of Technology And Science The University Of Tokushima
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Ohno Yasuo
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Yasuo Ohno
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nokubo Hiroyuki
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Okada Masanari
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Takahashi Kensuke
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Niwa Naoki
Kajima Technical Research Institute, Tokyo 182-0036, Japan
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Masanari Okada
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Hiroyuki Nokubo
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Jin-Ping Ao
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Jin-Ping Ao
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Ohmuro Keisuke
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Sogawa Yuji
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Katsutoshi Nakatani
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Yuji Sogawa
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Cheng-Yu Hu
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Keisuke Ohmuro
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Shinohara Naoki
Research Institute for Sustainable Humanosphere (RISH), Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
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Ikawa Yusuke
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Masahiro Sugimoto
Toyota Motor Corp., 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan
著作論文
- A Study on Ohmic Contact to Dry-Etched p-GaN
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
- GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
- 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
- GaN Schottky Diodes for Microwave Power Rectification
- Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C