HU Cheng-Yu | Institute of Technology and Science, The University of Tokushima

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概要

• HU Cheng-Yuの詳細を見る
• 同名の論文著者
• Institute of Technology and Science, The University of Tokushimaの論文著者

関連著者

• AO Jin-Ping

  Institute of Technology and Science, The University of Tokushima

• HU Cheng-Yu

  Institute of Technology and Science, The University of Tokushima

• OHNO Yasuo

  Institute of Technology and Science, The University of Tokushima

• Ohno Yasuo

  Univ. Tokushima Tokushima‐shi Jpn

• Ao Jin‐ping

  Univ. Tokushima Tokushima‐shi Jpn

• Ao Jin-ping

  Satellite Venture Business Laboratory The University Of Tokushima

• Ao J‐p

  Univ. Tokushima Tokushima‐shi Jpn

• Hu Cheng‐yu

  Univ. Tokushima Tokushima Jpn

• Ohno Yasuo

  Institute Of Technology And Science The University Of Tokushima

• Hu Cheng-yu

  Institute Of Technology And Science The University Of Tokushima

• OKADA Masaya

  Institute of Technology and Science, The University of Tokushima

• Okada Masaya

  Univ. Tokushima Tokushima‐shi Jpn

• YAMAOKA Yuya

  Institute of Technology and Science, The University of Tokushima

• NAKATANI Katsutoshi

  Institute of Technology and Science, the University of Tokushima

• KAWAI Hiroji

  Powdec K.K

• 岡田 政也

  徳島大学ソシオテクサイエンス研究部

• Okada Masaya

  Institute Of Technology And Science The University Of Tokushima

• Okada Masaya

  Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan

• Yamaoka Yuya

  Institute Of Technology And Science The University Of Tokushima

• IKAWA Yusuke

  Institute of Technology and Science, the University of Tokushima

• YUASA Yorihide

  Institute of Technology and Science, the University of Tokushima

• Nakatani Katsutoshi

  Institute Of Technology And Science The University Of Tokushima

• Ikawa Yusuke

  Institute Of Technology And Science The University Of Tokushima

• Yuasa Yorihide

  Institute Of Technology And Science The University Of Tokushima

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著作論文

• Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
• Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
• A Study on Ohmic Contact to Dry-Etched p-GaN
• Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
• Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
• 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection

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