OHNO Yasuo | Institute of Technology and Science, The University of Tokushima

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著作論文

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
A 1.3V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10Gbps (Special Issue on Ultra-High-Speed LSIs)
A Study on Ohmic Contact to Dry-Etched p-GaN
Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Effect of Moisture on Impact Toughness of Sugar-Coated Tablets Manufactured by the Dusting Method
Improvement of Impact Toughness of Sugar-Coated Tablets Manufactured by the Dusting Method
Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection

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