Okada Masaya | Univ. Tokushima Tokushima‐shi Jpn
スポンサーリンク
概要
関連著者
-
Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
-
Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
-
Okada Masaya
Univ. Tokushima Tokushima‐shi Jpn
-
Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
-
Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
-
岡田 政也
徳島大学ソシオテクサイエンス研究部
-
Okada Masaya
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
-
Kikuta Daigo
Department Of Electrical And Electronic Engineering The University Of Tokushima
-
AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
-
OKADA Masaya
Institute of Technology and Science, The University of Tokushima
-
HU Cheng-Yu
Institute of Technology and Science, The University of Tokushima
-
OHNO Yasuo
Institute of Technology and Science, The University of Tokushima
-
KIKUTA Daigo
Department of Electrical and Electronic Engineering, The University of Tokushima
-
AO Jin-Ping
Dept. of Electrical and Electronic Engineering, The University of Tokushima
-
OKADA Masaya
Dept. of Electrical and Electronic Engineering, The University of Tokushima
-
KIKUTA Daigo
Dept. of Electrical and Electronic Engineering, The University of Tokushima
-
OHNO Yasuo
Dept. of Electrical and Electronic Engineering, The University of Tokushima
-
Takaki Ryohei
Department Of Electrical And Electronic Engineering The University Of Tokushima
-
YAMAOKA Yuya
Institute of Technology and Science, The University of Tokushima
-
TAKAKI Ryohei
Department of Electrical and Electronic Engineering, The University of Tokushima
-
TAKAKI Ryohei
Dept. of Electrical and Electronic Eng., The University of Tokushima
-
MATSUDA Junya
Dept. of Electrical and Electronic Eng., The University of Tokushima
-
WEI Xin
Satellite Venture Business Laboratory, The University of Tokushima
-
Wei Xin
Satellite Venture Business Laboratory The University Of Tokushima
-
Okada Masaya
Institute Of Technology And Science The University Of Tokushima
-
Hu Cheng‐yu
Univ. Tokushima Tokushima Jpn
-
Ohno Yasuo
Institute Of Technology And Science The University Of Tokushima
-
Hu Cheng-yu
Institute Of Technology And Science The University Of Tokushima
-
Ohno Yasuo
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
-
Ao Jin-Ping
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
-
Kikuta Daigo
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
-
OKADA Masaya
Department of Electrical and Electronic Engineering, The University of Tokushima
-
AO Jin-Ping
Department of Electrical and Electronic Engineering, The University of Tokushima
-
OHNO Yasuo
Department of Electrical and Electronic Engineering, The University of Tokushima
-
MATSUDA Junya
Department of Electrical and Electronic Engineering, The University of Tokushima
-
KAN Ryota
Dept. of Electrical and Electronic Engineering, The University of Tokushima
-
HIRAO Toshio
Japan Atomic Energy Research Institute
-
OKADA Hideki
Dept. of Electrical and Electronic Engineering, The University of Tokushima
-
ONODA Shinobu
Japan Atomic Energy Research Institute
-
ITOH Hisayoshi
Japan Atomic Energy Research Institute
-
Kan Ryota
Dept. Of Electrical And Electronic Engineering The University Of Tokushima
-
Hirao Toshio
Japan Atomic Energy Agency
-
Onoda Shinobu
Course Of Applied Science
-
Itoh Hisayoshi
Japan Atomic Energy Agency
-
Okada Hideki
Dept. Of Electrical And Electronic Engineering The University Of Tokushima
-
Yamaoka Yuya
Institute Of Technology And Science The University Of Tokushima
-
Matsuda Junya
Department Of Electrical And Electronic Engineering The University Of Tokushima
-
Ohno Yasuo
Department Of Electrical And Electronic Engineering The University Of Tokushima
-
Ohno Yasuo
Department Of Electric And Electronic Engineering The University Of Tokushima
著作論文
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- A Study on Ohmic Contact to Dry-Etched p-GaN
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress