Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
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概要
- 論文の詳細を見る
The mechanism of current collapse of AlGaN/GaN heterojunction field-effect transistors (HFETs) was investigated by gate bias stress with and without illumination. It is clarified that there are two positions where negative charges accumulate, at the gate edge and in the bulk epi-layer. In the gate-edge mode, the charge comes either through the passivation film or the AlGaN layer, depending on the resistance of the films. Reduction of leakage current in the passivation film will be important to suppress the surface-related collapse.
- （社）電子情報通信学会の論文
著者
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Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
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AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
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YAMAOKA Yuya
Institute of Technology and Science, The University of Tokushima
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OKADA Masaya
Institute of Technology and Science, The University of Tokushima
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HU Cheng-Yu
Institute of Technology and Science, The University of Tokushima
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OHNO Yasuo
Institute of Technology and Science, The University of Tokushima
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Okada Masaya
Univ. Tokushima Tokushima‐shi Jpn
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