Ao Jin‐ping | Univ. Tokushima Tokushima‐shi Jpn
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概要
関連著者
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
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Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
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Okada Masaya
Univ. Tokushima Tokushima‐shi Jpn
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Kikuta Daigo
Department Of Electrical And Electronic Engineering The University Of Tokushima
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KIKUTA Daigo
Department of Electrical and Electronic Engineering, The University of Tokushima
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AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
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HU Cheng-Yu
Institute of Technology and Science, The University of Tokushima
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OHNO Yasuo
Institute of Technology and Science, The University of Tokushima
著作論文
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
- High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer