Okada Masaya | Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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概要
- 同名の論文著者
- Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japanの論文著者
関連著者
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岡田 政也
徳島大学ソシオテクサイエンス研究部
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Okada Masaya
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
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Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
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Okada Masaya
Univ. Tokushima Tokushima‐shi Jpn
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大野 泰夫
徳島大学ソシオテクノサイエンス研究部
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KIKUTA Daigo
Department of Electrical and Electronic Engineering, The University of Tokushima
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KIKUTA Daigo
Dept. of Electrical and Electronic Engineering, The University of Tokushima
著作論文
- Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- C-10-13 マイクロ波整流用GaNショットキーダイオードの特性評価(C-10. 電子デバイス,一般セッション)
- C-10-10 GaN/AlGaN/GaNフォトトランジスタを用いたUVセンサ回路(C-10.電子デバイス,一般講演)
- C-10-19 AlGaN/GaN HFETパルスI-V特性シミュレーション(C-10.電子デバイス)
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- A Study on Ohmic Contact to Dry-Etched p-GaN
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- Gate leakage reduction mechanism of AlGaN/GaN MIS-HFETs
- Mechanism of AlGaN/GaN heterostructure field-effect transistor threshold voltage shift by illumination