Ohno Yasuo | Univ. Tokushima Tokushima‐shi Jpn

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概要

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著作論文

Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile
High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
A Study on Ohmic Contact to Dry-Etched p-GaN
Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection

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