AO Jin-Ping | Department of Electrical and Electronic Engineering, The University of Tokushima

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概要

• Ao Jin-Pingの詳細を見る
• 同名の論文著者
• Department of Electrical and Electronic Engineering, The University of Tokushimaの論文著者

関連著者

• Ohno Yasuo

  Univ. Tokushima Tokushima‐shi Jpn

• KIKUTA Daigo

  Department of Electrical and Electronic Engineering, The University of Tokushima

• AO Jin-Ping

  Department of Electrical and Electronic Engineering, The University of Tokushima

• OHNO Yasuo

  Department of Electrical and Electronic Engineering, The University of Tokushima

• Ao J‐p

  Univ. Tokushima Tokushima‐shi Jpn

• Kikuta Daigo

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Ao Jin‐ping

  Univ. Tokushima Tokushima‐shi Jpn

• Ao Jin-ping

  Satellite Venture Business Laboratory The University Of Tokushima

• Ohno Yasuo

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Ohno Yasuo

  Department Of Electric And Electronic Engineering The University Of Tokushima

• OKADA Masaya

  Department of Electrical and Electronic Engineering, The University of Tokushima

• TAKAKI Ryohei

  Department of Electrical and Electronic Engineering, The University of Tokushima

• MATSUDA Junya

  Department of Electrical and Electronic Engineering, The University of Tokushima

• KUBOTA Naotaka

  Department of Electrical and Electronic Engineering, The University of Tokushima

• 岡田 政也

  徳島大学ソシオテクサイエンス研究部

• Okada Masaya

  Univ. Tokushima Tokushima‐shi Jpn

• Matsuda Junya

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Takaki Ryohei

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Okada Masaya

  Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan

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著作論文

• Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile

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