A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)
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概要
- 論文の詳細を見る
A model for the enhancement-mode operation of an AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor (MIS-HFET) under DC and AC conditions is proposed. In DC operation at positive gate voltages, the MIS-HFET can be divided into a transistor area and a resistor area due to the diode nature of the insulator/AlGaN interface. The transistor area shrinks with the increases in gate voltage. The intrinsic-transistor gate-length reduction causes a drain current increase. The I-V characteristics based on the gradual channel approximation are derived. The I_D hysteresis of the MIS-HFET is investigated by a circuit simulation using SPICE. We have confirmed that the hysteresis was caused by the phase difference between the potential variation of the gate insulator/AlGaN interface and that of the gate electrode due to CR components in the gate structure.
- 社団法人電子情報通信学会の論文
- 2006-07-01
著者
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Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
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KIKUTA Daigo
Department of Electrical and Electronic Engineering, The University of Tokushima
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AO Jin-Ping
Department of Electrical and Electronic Engineering, The University of Tokushima
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OHNO Yasuo
Department of Electrical and Electronic Engineering, The University of Tokushima
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MATSUDA Junya
Department of Electrical and Electronic Engineering, The University of Tokushima
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
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Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
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Kikuta Daigo
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Matsuda Junya
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Ohno Yasuo
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Ohno Yasuo
Department Of Electric And Electronic Engineering The University Of Tokushima
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