Buffer Layer Doping Concentration Measurement Using V_T-V_<SUB> Characteristics of GaN HEMT with p-GaN Substrate Layer

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概要

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• To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

• （社）電子情報通信学会の論文
• 2010-08-01

著者

• Ohno Yasuo

  Univ. Tokushima Tokushima‐shi Jpn

• AO Jin-Ping

  Institute of Technology and Science, The University of Tokushima

• HU Cheng-Yu

  Institute of Technology and Science, The University of Tokushima

• OHNO Yasuo

  Institute of Technology and Science, The University of Tokushima

• Ao Jin‐ping

  Univ. Tokushima Tokushima‐shi Jpn

• Ao Jin-ping

  Satellite Venture Business Laboratory The University Of Tokushima

• Ao J‐p

  Univ. Tokushima Tokushima‐shi Jpn

• NAKATANI Katsutoshi

  Institute of Technology and Science, the University of Tokushima

• KAWAI Hiroji

  Powdec K.K

• Hu Cheng‐yu

  Univ. Tokushima Tokushima Jpn

• Ohno Yasuo

  Institute Of Technology And Science The University Of Tokushima

• Hu Cheng-yu

  Institute Of Technology And Science The University Of Tokushima

• Nakatani Katsutoshi

  Institute Of Technology And Science The University Of Tokushima

関連論文

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