Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

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概要

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• In this study, we evaluated the annealing temperature and time-dependent electrical properties of AlGaN/GaN heterostructure field-effect transistors (HFETs) utilizing TiN/W/Au as the gate electrode. With the annealing temperature increasing from 750 to 900 °C for the annealing time of 1 min, the sheet resistance of TiN/W/Au films increased gradually while that of the ohmic contact was minimum (0.66 \Omega mm) at 800 °C. From the current--voltage characteristics of the Schottky diode and HFETs, it is demonstrated that annealing at 800 °C showed the lowest on-resistance and highest maximum drain current. By prolonging the annealing from 0.5 to 10 min at 800 °C, good device performance was achieved when the annealing time was 1 and 3 min, while the device performance degraded showing an increased gate leakage current and gate resistance with increasing annealing time. These results demonstrated that the TiN/W/Au gate, which can withstand 800 °C annealing for a short time, is suitable for application in the gate-first process for AlGaN/GaN HFETs.

• 2013-11-25

著者

• AO Jin-Ping

  Institute of Technology and Science, The University of Tokushima

• Ohno Yasuo

  Institute Of Technology And Science The University Of Tokushima

• Jiang Ying

  Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

• Wang Qingpeng

  Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

• Kishi Akinori

  Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

• Shiraishi Takayuki

  Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

• Li Liuan

  Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

関連論文

• Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
• Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
• A Study on Ohmic Contact to Dry-Etched p-GaN
• Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
• Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
• GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
• 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
• GaN Schottky Diodes for Microwave Power Rectification
• Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C
• Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors
• Wireless Inter-Chip Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators
• Inductively coupled plasma reactive ion etching with SiCl4 gas for recessed gate AlGaN/GaN heterostructure field effect transistor
• Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

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