Inductively coupled plasma reactive ion etching with SiCl4 gas for recessed gate AlGaN/GaN heterostructure field effect transistor

スポンサーリンク

概要

• 論文の詳細を見る

• An extremely low and controllable etching rate of 1.25 nm/min for GaN is obtained with SiCl4 in inductively coupled plasma reactive ion etching. By atomic force microscope, the etched surface is observed to be as smooth as the as-grown surface. The etching technology is applied to the fabrication of recessed gate AlGaN/GaN heterostructure field effect transistors (HFETs). The HFETs showed good drain current–drain voltage characteristics with the values estimated from the AlGaN layer thickness decrease. In the positive-gate bias, the gate leakage current increases sharply with an $n$-value of 1.68, improved from 4.09 without etching. The negative bias current remains similar to that of the un-etched sample. Carrier drift mobility also remained approximately the same value of 1500 cm2 V-1 s-1. Thus, no HFET performance degradation caused by the etching is observed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• AO Jin-Ping

  Institute of Technology and Science, The University of Tokushima

• Ohno Yasuo

  Institute Of Technology And Science The University Of Tokushima

• Kikuta Daigo

  Graduate School of Advanced Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

• Hiramoto Michihiro

  SAMCO, Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan

• Ogiya Hiromichi

  SAMCO, Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan

• Matsuura Kazuaki

  Graduate School of Advanced Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

• Hiramot Michihiro

  SAMCO, Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan

• Kawa Hiroji

  POWDEC K.K., 739 Ichizawa-cho, Asahi-ku, Yokohama 241-0014, Japan

関連論文

• Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
• Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
• A Study on Ohmic Contact to Dry-Etched p-GaN
• Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
• Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
• GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
• 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
• GaN Schottky Diodes for Microwave Power Rectification
• Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C
• Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors
• Wireless Inter-Chip Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators
• Inductively coupled plasma reactive ion etching with SiCl4 gas for recessed gate AlGaN/GaN heterostructure field effect transistor
• Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

もっと見る 閉じる

スポンサーリンク