Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors
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概要
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To gain a flat recess profile with uniform etching depth, dry recess experiment with different inductively coupled plasma (ICP) etching conditions was done on an AlGaN/GaN heterostructure. Trenching effect at the bottom near the sidewall was observed when positive photoresist was utilized and the ICP power was low. The recess profile was improved by adopting SiO2 as the etching mask and increasing the ICP power. GaN metal--oxide--semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with different gate recess conditions were fabricated and characterized. The maximum field-effect mobility of 152.8 cm-2 V-1 s-1 and the minimum interface state density of 1.39\times 10^{11} cm-2 eV-1 were obtained from the optimized gate recess condition with ICP power of 100 W, bias power of 20 W and etching mask of SiO2.
- 2013-01-25
著者
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AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
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Ohno Yasuo
Institute Of Technology And Science The University Of Tokushima
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Motoyama Shin-ichi
Research & Development Center, SAMCO international Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 61
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Ohno Yasuo
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Motoyama Shin-ichi
Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
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Wang Dejun
School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, China
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Wang Qingpeng
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Tamai Kentaro
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Miyashita Takahiro
Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
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