Deposition of Cathode Coupled Plasma Enhanced Chemical Vapor Deposition SiN Films Using Liquid Source Material
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概要
- 論文の詳細を見る
Silicon nitride (SiN) films were prepared using 1,1,1,3,3,3-Hexamethyldisilazane (HMDS) instead of monosilane (SiH4) by the cathode coupled plasma enhanced chemical vapor deposition (PE-CVD). As HMDS and NH3 were used, SiN film prepared at RF power of 300 W shows high insulation performance, breakdown voltage of which is 7 MV/cm. This value is same as Si3N4 films deposited by thermal CVD. These films can be used for insulating films in various semiconductor devices. In addition, because it has higher optical transparency than SiN films deposited using SiH4, it can be used for optical coating films.
- Japan Society of Applied Physicsの論文
- 2003-09-15
著者
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SAWAI Mikio
Research & Development Center, Samco International Incorporated
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TATSUTA Toshiaki
Research & Development Center, Samco International Incorporated
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TSUJI Osamu
Research & Development Center, Samco International Incorporated
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Sawai Mikio
Research & Development Center Samco International Inc
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Tsuji O
Samco International Co. Ltd.
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Tsuji O
Samco International Inc. Kyoto Jpn
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Ohgishi Atsufumi
Research & Development Center, SAMCO international Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 61
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Motoyama Shin-ichi
Research & Development Center, SAMCO international Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 61
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Ohgishi Atsufumi
Research & Development Center Samco International Inc
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Motoyama Shin-ichi
Samco International Co. Ltd.
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Tatsuta T
Samco International Co. Ltd.
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