Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation

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概要

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• We have carried out delay time analysis for the high-frequency characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs) on sapphire substrates, focusing on a comparison between the effects of AlN and SiN surface passivation. HFETs with AlN passivation, in comparison with those with SiN passivation, exhibit high current gain cut-off frequencies $ f_{\text{T}}$ with good flatness, in accordance with high intrinsic transconductance due to the self-heating reduction effect of AlN. From the delay time analysis, we find that the effective saturation electron velocity for AlN and SiN passivation is similar, while the electron mobility under the gate for AlN passivation is higher. This implies that the higher $ f_{\text{T}}$ is mainly due to the higher electron mobility under the gate owing to the self-heating reduction by AlN passivation. This is consistent with the fact that the saturation velocity has a weak temperature dependence, while the mobility has a strong dependence.

• 2009-04-25

著者

• KAWAI Hiroji

  Powdec K.K

• Suzuki Toshi-kazu

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

• Sumida Yasunobu

  POWDEC K.K., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-0028, Japan

• Tanaka Nariaki

  Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

関連論文

• Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
• Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
• Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
• Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
• Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
• High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface
• GaN Schottky Diodes for Microwave Power Rectification
• Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
• Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
• Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation
• Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
• Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
• Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
• Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET

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