Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
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Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
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TAKAKI Ryohei
Department of Electrical and Electronic Engineering, The University of Tokushima
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KIKUTA Daigo
Department of Electrical and Electronic Engineering, The University of Tokushima
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MATSUDA Junya
Department of Electrical and Electronic Engineering, The University of Tokushima
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AO Jin-Ping
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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OKADA Masaya
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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KIKUTA Daigo
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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OHNO Yasuo
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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TAKAKI Ryohei
Dept. of Electrical and Electronic Eng., The University of Tokushima
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MATSUDA Junya
Dept. of Electrical and Electronic Eng., The University of Tokushima
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WEI Xin
Satellite Venture Business Laboratory, The University of Tokushima
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
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Wei Xin
Satellite Venture Business Laboratory The University Of Tokushima
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Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
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岡田 政也
徳島大学ソシオテクサイエンス研究部
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Okada Masaya
Univ. Tokushima Tokushima‐shi Jpn
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Kikuta Daigo
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Matsuda Junya
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Takaki Ryohei
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Ohno Yasuo
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Ao Jin-Ping
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Kikuta Daigo
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Okada Masaya
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
関連論文
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- A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
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- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- A Study on Ohmic Contact to Dry-Etched p-GaN
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers
- A04 EFFECTS OF METYRAPONE ON THE CYTOCHROME P450 MEDIATED DRUG METABOLIZING ACTIVITIES IN THE PRIMARY CULTURES OF RAT HEPATOCYTES
- Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
- 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
- Gate leakage reduction mechanism of AlGaN/GaN MIS-HFETs
- Mechanism of AlGaN/GaN heterostructure field-effect transistor threshold voltage shift by illumination