Gate leakage reduction mechanism of AlGaN/GaN MIS-HFETs
スポンサーリンク
概要
- 論文の詳細を見る
The gate leakage reduction mechanism of AlGaN/GaN metal-insulator-semiconductor (MIS) heterostructure field-effect transistors (HFETs) is investigated and compared with those of three types of HFET, namely; a conventional HFET, a standard MIS-HFET and a specially prepared MIS-HFET with a metal interlayer. It is found that the resistance of the AlGaN layer with an insulator deposited on its surface is much higher than that of the AlGaN layer with a metal. From the fitting of transconductance-frequency characteristics, the resistance of the insulator-deposited AlGaN layer is about 5 orders of magnitude higher than that of the metal-deposited AlGaN layer. From dc measurements, the resistance of the insulator-deposited AlGaN layer at a negative gate bias is higher than that of the insulator layer. From these results, it can be concluded that gate leakage is suppressed by the high resistance of the AlGaN layer in the MIS-HFET at a negative gate bias.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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KIKUTA Daigo
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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TAKAKI Ryohei
Dept. of Electrical and Electronic Eng., The University of Tokushima
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MATSUDA Junya
Dept. of Electrical and Electronic Eng., The University of Tokushima
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岡田 政也
徳島大学ソシオテクサイエンス研究部
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Okada M
Dept. Obst. Gynec., Dept. of Pediatrics, Kochi Med. Sch.
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Ohno Y
Dept. Obst. Gynec., Kyoto Prefectural Univ. Med.
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Ohno Yasuo
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Ao Jin-Ping
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Wei X
Satellite Venture Business Laboratory, The University of Tokushima, Tokushima 770-8506, Japan
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Ao JP
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Wei Xin
Satellite Venture Business Laboratory, The University of Tokushima, Tokushima 770-8506, Japan
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Kikuta Daigo
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Okada Masaya
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Matsuda Junya
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Takaki Ryohei
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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