Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
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AO Jin-Ping
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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OKADA Masaya
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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KIKUTA Daigo
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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OHNO Yasuo
Dept. of Electrical and Electronic Engineering, The University of Tokushima
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TAKAKI Ryohei
Dept. of Electrical and Electronic Eng., The University of Tokushima
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MATSUDA Junya
Dept. of Electrical and Electronic Eng., The University of Tokushima
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WEI Xin
Satellite Venture Business Laboratory, The University of Tokushima
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Wei Xin
Satellite Venture Business Laboratory The University Of Tokushima
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Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
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Okada Masaya
Univ. Tokushima Tokushima‐shi Jpn
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Kikuta Daigo
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Takaki Ryohei
Department Of Electrical And Electronic Engineering The University Of Tokushima
関連論文
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile
- High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer