Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)

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概要

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• This investigation of the temperature and illumination effects on the AlGaN/GaN HFET threshold voltage shows that it shifts about -1V under incandescent lamp or blue LED illumination, while almost no shift takes place under red LED illumination. The temperature coefficient for the threshold voltage shift is +3.44mV/deg under the illuminations and +0.28mV/deg in darkness. The threshold voltage variation can be attributed to a virtual back-gate effect caused by light-generated buffer layer potential variations. The expressions for the potential variation are derived using Shockley-Read-Hall (SRH) statistics and the Maxwell-Boltzmann distribution for the carriers and deep traps in the buffer layer. The expressions indicate that large photoresponses will occur when the electron concentration in the buffer layer is extremely small, that is, highly resistive. In semi-insulating substrates, the substrate potential varies so as to keep the trap occupation function constant. The sign and the magnitude of the threshold voltage variation are explained by the shift of the pinning energy calculated from the Fermi-Dirac distribution function.

• 社団法人電子情報通信学会の論文
• 2006-07-01

著者

• Ohno Yasuo

  Univ. Tokushima Tokushima‐shi Jpn

• OKADA Masaya

  Department of Electrical and Electronic Engineering, The University of Tokushima

• TAKAKI Ryohei

  Department of Electrical and Electronic Engineering, The University of Tokushima

• KIKUTA Daigo

  Department of Electrical and Electronic Engineering, The University of Tokushima

• AO Jin-Ping

  Department of Electrical and Electronic Engineering, The University of Tokushima

• OHNO Yasuo

  Department of Electrical and Electronic Engineering, The University of Tokushima

• Ao Jin‐ping

  Univ. Tokushima Tokushima‐shi Jpn

• Ao Jin-ping

  Satellite Venture Business Laboratory The University Of Tokushima

• Ao J‐p

  Univ. Tokushima Tokushima‐shi Jpn

• 岡田 政也

  徳島大学ソシオテクサイエンス研究部

• Okada Masaya

  Univ. Tokushima Tokushima‐shi Jpn

• Kikuta Daigo

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Takaki Ryohei

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Ohno Yasuo

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Ohno Yasuo

  Department Of Electric And Electronic Engineering The University Of Tokushima

• Okada Masaya

  Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan

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