Mechanism of AlGaN/GaN heterostructure field-effect transistor threshold voltage shift by illumination
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概要
- 論文の詳細を見る
It is found that AlGaN/GaN heterostructure field-effect transistor (HFET) drain current increases under illumination at a photon energy of 2.92 eV, lower than the bandgap energy. Analysis with Shockley–Read–Hall (SRH) statistics for deep traps indicates that the electron generation from deep traps in the buffer layer is responsible for the shift. The trap energy is identified that from the conduction band. High resistivity buffer layers compensated by deep traps, which are often required for high frequency applications, give larger threshold voltage variation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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岡田 政也
徳島大学ソシオテクサイエンス研究部
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Ohno Yasuo
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Ao Jin-Ping
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Okada Masaya
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
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Ito Hideki
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Okada Masaya
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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