N/Ge Co-Implantation into GaN for N-Type Doping

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概要

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• We have investigated the doping characteristics and structural defects of N/Ge co-implanted GaN. N-type regions are produced in undoped GaN films by Ge and N/Ge implantation and subsequent annealing with an SiO2 encapsulation layer at 1300°C. Improved Ge-doping characteristics are achieved for GaN by N/Ge co-implantation, attaining activation efficiencies above 95%, whereas in the case of conventional Ge implantation, the activation efficiency is low due to the lack of N atoms for maintaining the GaN stoichiometry. From transmission electron microscopic observations, the damage induced by the co-implantation is entirely restored by annealing at 1300°C. However, positron annihilation spectroscopic measurements reveal the creation of new vacancy-type defects with markedly different characteristics in the electrically activated regions by the annealing of both Ge- and N/Ge-implanted samples.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2002-04-30

著者

• Kachi Tetsu

  Toyota Central R & D Laboratories Inc.

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Nakano Yoshitaka

  TOYOTA Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan

• Nakano Yoshitaka

  TOYOTA Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan

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