New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る

• The epitaxial growth of high-quality GaAs using trimethyl-gallium(TMG) and arsine(AsH_3) at low temperatures (〜500℃) is reported. The growth has been performed with photostimulation using a CO_2 laser and an ultrahigh-pressure Hg lamp. The CO_2 laser irradiation absorbed by AsH_3 was effective for enhancement of the growth rate temperatures below 600℃ and the ultraviolet light from the Hg lamp was effective for improvement of the quality of the growth layers. The measurements of the electrical and optical properties showed that high-quality epitaxial layers were obtained at the growth temperatures down to 500℃ by this method.

• 社団法人応用物理学会の論文
• 1988-08-20

著者

• Kachi Tetsu

  Toyota Central Research And Development Laboratories Inc.

• Kachi Tetsu

  Toyota Central R & D Laboratories Inc.

• Kachi Tetsu

  Toyota Central Research & Development. Inc.

• ITO Hiroshi

  Toyota Central Research and Development Laboratories Inc.

• TERADA Shigeo

  Toyota Central Research & Development., Inc.

• Terada S

  Toyota Central Research & Development. Inc.

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