FOREWORD
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概要
- 論文の詳細を見る
- 2012-05-01
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関連論文
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- N/Ge Co-Implantation into GaN for N-Type Doping
- N/Ge Co-Implantation into GaN for N-Type Doping
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon
- New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
- Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
- Recent Advances on GaN Power Devices
- Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- FOREWORD
- A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
- Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
- Reliability Evaluation of Al
- Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (Special Issue : Recent Advances in Nitride Semiconductors)
- N/Ge Co-Implantation into GaN for N-Type Doping
- FOREWORD