Reliability Evaluation of Al
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概要
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The time-to-breakdown (t_{\text{BD}}) of Al<inf>2</inf>O<inf>3</inf>deposited by ozone-based atomic layer deposition (ALD) on dry-etched n-type GaN was evaluated by constant-voltage-stress time-dependent dielectric breakdown (TDDB) measurements. The influence of dry etching was not observed in the TDDB and current--voltage (I--V) measurements at room temperature. The t_{\text{BD}} of the ALD-Al<inf>2</inf>O<inf>3</inf>film was estimated to be more than 40,000 years at 3 MV/cm and room temperature. However, the t_{\text{BD}} estimated at 250 °C was around 10^{2}--10^{3} s.
- 2013-08-25
著者
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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Kikuta Daigo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Narita Tetsuo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Kikuta Daigo
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Kutsuki Katsuhiro
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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