Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
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概要
- 論文の詳細を見る
The improvement of current collapses of p-GaN gate GaN high-electron-mobility transistors (HEMTs) caused by the effects of surface treatment and the passivation layer was investigated. The NH<inf>3</inf>treatment and high-temperature oxide (HTO) passivation layer on the AlGaN layer are effective in improving the current collapse of a p-GaN gate GaN HEMT. The current collapse at a long time constant (\tau = 4 s) could be decreased by the NH<inf>3</inf>treatment of the AlGaN layer, because the nitrogen atoms in nitrogen vacancies in the AlGaN layer (trap level: 0.6 eV) would be incorporated, resulting in a low surface density. The current collapse at an intermediate time constant (\tau = 11 ms) could also be decreased by the deposition of the HTO passivation layer on the AlGaN layer, because the low-interface-density layer (trap level: 0.4 eV) of HTO/AlGaN would be formed.
- 2013-04-25
著者
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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Kanechika Masakazu
Toyota Central R&d Laboratories Inc.
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Itoh Kenji
Toyota Central R&d Laboratories Inc.
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NISHIKAWA Koichi
Toyota Central Research and Development Laboratories Inc.
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Itoh Kenji
Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Katsuno Takashi
Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Kachi Tetsu
Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Nishikawa Koichi
Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Kanechika Masakazu
Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Katsuno Takashi
Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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