Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-07-15

著者

• MITSUSHIMA Yasuichi

  TOYOTA Central R&D Labs., Inc.

• KANECHIKA Masakazu

  Toyota Central R&D Laboratories, Inc.

• Kanechika Masakazu

  Toyota Central R&d Laboratories Inc.

関連論文

• Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
• GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
• Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions
• Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics
• A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching
• Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
• A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
• Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
• Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions

スポンサーリンク