Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma

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Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Dependency of Boron Doping Efficiency on Hydrogen Flow Rate in Hydro-Fluorinated Amorphous Silicon
Properties of Hydro-Fluorinated Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2
The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF_2
Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2 and CF_4 Mixture
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer
Influence of Ce Content on Crystal and Electrical Properties of Ce_xZr_0_2 Thin Films on Si(100) Substrates
Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions
Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics
A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching
Electrical Characterization of GaN p--n Junctions Grown on Freestanding GaN Substrates by Metal--Organic Chemical Vapor Deposition
Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
Preferred Orientation in Ti Films Sputter-Deposited om Si0_2 Glass:The Role of Water Chemisorption on the Substrate
Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions
Reliability Evaluation of Al
Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (Special Issue : Recent Advances in Nitride Semiconductors)

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