Preferred Orientation in Ti Films Sputter-Deposited om Si0_2 Glass:The Role of Water Chemisorption on the Substrate

概要

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Ti thin films have been grown on SiO_2 glass layers at 35O℃ by ultrahigh vacuum magnetron sputtering with a small amount of H_20, H_2 or 0_2 gas introduction to investigate the influence of adsorption on the crystallographic orientation of the Ti films. In situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction(XRD) studies showed that a water vapor introduction at the beginning of sputter deposition promotes a highly preferred (002) orientation, whereas H_2 gas or 0_2 gas introduction does not affect the orientation. These results indicate that the increase of water chemisorption on the substrate by H_20 gas introduction and reduction of the surface free energy enhance the self-assembly of the Ti atoms toward the most stable C-axis orientation.
社団法人応用物理学会の論文
1997-02-01