Mitsushima Yasuichi | Toyota Central R & D Laboratories Inc.

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著作論文

Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics
A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching
Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
Preferred Orientation in Ti Films Sputter-Deposited om Si0_2 Glass:The Role of Water Chemisorption on the Substrate
Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions

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