Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-12-30
著者
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MITSUSHIMA Yasuichi
TOYOTA Central R&D Labs., Inc.
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KANECHIKA Masakazu
Toyota Central R&D Laboratories, Inc.
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Kanechika M
Toyota Central R&d Lab. Inc. Aichi Jpn
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Kanechika Masakazu
Toyota Central R&d Laboratories Inc.
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Mitsushima Yasuichi
Toyota Central R&d Laboratories Inc.
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Mitsushima Yasuichi
Toyota Central R & D Laboratories Inc.
関連論文
- Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions
- Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics
- Theory of Tunneling in Double Barrier
- A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
- Preferred Orientation in Ti Films Sputter-Deposited om Si0_2 Glass:The Role of Water Chemisorption on the Substrate
- A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
- Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
- Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions