Photon Drag Effect in Germanium
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概要
- 論文の詳細を見る
It is described how the photon drag voltage in germanium varies with hole concentration and how it depends on temperature. Also some considerations are taken into the following additional contributions similar to the photon drag effect: (1) the Thomson effect, (2) the hot carrier effect and (3) the diffusion effect. Experiments were performed by using a Q-switched CO_2 laser. This photon drag effect provides a convenient detector for use with Q-switched CO_2 lasers and mode-locked CO_2 lasers,because it operates with the high speed response time smaller than 10^<-10>s at room temperature. In the case of p-type germanium with the resistivity of 2.3 Ω-cm and the size of 1.5×1.5×20 mm^3, its responsivity (R) is 3×10^<-5>(V/W) and the detectivity (D) is 1.4×10^3(W^<-1>) at room temperature and 1.1×10^4(W^<-1>) at 77K.
- 社団法人応用物理学会の論文
- 1972-11-05
著者
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Jimbo Takashi
Department Of Electronics Nagoya University
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Engineering Nagoya University
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HATTORI Hajime
Department of Electronic Engineering, Nagoya University
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Umeno Masayoshi
Department Of Electronics Faculty Of Engineering Nagoya University
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Miki Shichiro
Department Of Electronics Faculty Of Engineering Nagoya University
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Fujitani Osamu
Department Of Electronic Engineering Nagoya University:(present Address) Fujitsu Co. Ltd.
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Fujitani Osamu
Department Of Electronics Faculty Of Engineering Nagoya University
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HATTORI Hazime
Department of Electronics, Faculty of Engineering, Nagoya University
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Hattori Hazime
Department Of Electronics Faculty Of Engineering Nagoya University
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