Tilt Deformation of Metalorganic Chemical Vapor Deposition Grown GaP on Si Substrate
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概要
- 論文の詳細を見る
The behavior of the stress and the deformation of a GaP layer grown on misoriented (001)Si was investigated for the thickness and the growth temperature. The compressive stress in the GaP layer decreased with increasing thickness up to 0.5 μm and then changed into the tensile stress. However, there was poor dependence of the tensile stress in a 1 μm-thick GaP layer on growth temperature. The tilt deformation of the GaP layer strongly depended on the growth temperature. It was found that the deformation strongly depended on the misfit strain in the GaP layer for a Si substrate at the growth temperature rather than the thermal strain, and that the tilt was under the influence of the atomic step on a Si substrate.
- 社団法人応用物理学会の論文
- 1992-07-15
著者
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SUZUKI Takayuki
Department of Neurosurgery, Himeji Medical Center
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Mori Masatoshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Mori Masatoshi
Department Of Chest Surgery Ehime Prefectural Central Hospital
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JIANG Z.K.
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Jiang Z.k.
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Suzuki Takayuki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Suzuki Takayuki
Department Of Applied Chemistry Faculty Of Engineering Gifu University
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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MORI Masatoshi
Department of Applied Chemistry, School of Engineering, Nagoya University
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