Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO_2 Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
We have shown that the use of SiO_2 back-coated Si substrate is effective in obtaining a low background electron concentration in an undoped GaAs layer grown on Si, particularly at high temperature, by MOCVD. Higher growth temperature improves the crystallinity of the GaAs layer grown on Si and helps to suppress the sidegating effect of GaAs MESFET's fabricated on Si. A low background electron concentration in the undoped GaAs layer is required for good pinch-off of the MESFET's. By using SiO_2 back-coated Si substrate, the undoped GaAs with an electron concentration of as low as 1×10^<15> cm^<-3> could be grown even at 750℃. The maximum transconductance of 160 mS/mm, good pinch-off and suppressed sidegating were achieved for the 2.5 μm gate length MESFET can SiO_2 back-coated Si.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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NOZAKI Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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Egawa Takashi
Department Of Neuropharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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Nozaki S
Univ. Electro‐communications Tokyo
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Nozaki Shinji
Department Of Communications And Systems The University Of Electro-communications
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EGAWA Takashi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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