First Demonstration of Al_xGa_<1-x>As/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Al_<0.1>Ga_<0.9>As/Si and thin GaAs/Si monolithic two-terminal tandem cells, which are fabricated by thermal diffusion and metalorganic chemical vapor deposition (MOCVD), have exhibited the active area efficiencies of 16.3% and 15.6%, and the total area efficiencies of 13.8% and 13.1%, respectively. The key technologies required to fabricate the successful tandem cell are the formation of the p^+-n junction in the Si substrate and the matching of the photocurrents between the top and the bottom cells.
- 社団法人応用物理学会の論文
- 1992-08-15
著者
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Egawa Takashi
Department Of Neuropharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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Shimizu Hiroaki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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SHIMIZU Hiroaki
Department of Applied Chemistry, Faculty of Engineering, Osaka University
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EGAWA Takashi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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