Fabrication of GaAs/Si Tandem Solar Cell by Epitaxial Lift-Off Technique

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概要

• 論文の詳細を見る

• A GaAs solar cell was successfully transplanted from a GaAs substrate to a Si substrate without degrading the conversion efficiency. The conversion efficiency of the GaAs solar cell bonded to the Si substrate is almost the same as that of the cell grown on a GaAs substrate and is much superior to that of the cell grown on a Si substrate by heteroepitaxy. The GaAs/Si tandem solar cell with the conversion efficiency of 19.4% (top cell: 18.2%, bottom cell: 1.2%) has been demonstrated.

• 2003-12-01

著者

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Taguchi Hironori

  Department Of Applied Physics Faculty Of Science Fukuoka University:(present Address) Kyushu Matsush

• Taguchi Hironori

  Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

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