Fabrication of GaAs/Si Tandem Solar Cell by Epitaxial Lift-Off Technique
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概要
- 論文の詳細を見る
A GaAs solar cell was successfully transplanted from a GaAs substrate to a Si substrate without degrading the conversion efficiency. The conversion efficiency of the GaAs solar cell bonded to the Si substrate is almost the same as that of the cell grown on a GaAs substrate and is much superior to that of the cell grown on a Si substrate by heteroepitaxy. The GaAs/Si tandem solar cell with the conversion efficiency of 19.4% (top cell: 18.2%, bottom cell: 1.2%) has been demonstrated.
- 2003-12-01
著者
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
-
Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Taguchi Hironori
Department Of Applied Physics Faculty Of Science Fukuoka University:(present Address) Kyushu Matsush
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Taguchi Hironori
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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