Ion Implantation Effects of Microcrystalline and Nanocrystalline Diamond Thin Films
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概要
- 論文の詳細を見る
Microcrystalline and nanocrystalline diamond thin films deposited on Si substrates by microwave plasma chemical vapor deposition are bombarded by 40 keV B+ ions. Raman scattering studies of the ion implanted diamond films reveal the structural modification irrespective of the nature of the crystalline quality. X-ray diffraction results indicate the possibility of formation of borocarbide phase on ion irradiation. Ion beam current dependence and post ion implantation annealing studies on the micro and nano-crystalline thin films are also presented.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-12-15
著者
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Tokunaga Tomoharu
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Yamaguchi Masafumi
Semiconductor Research Center Toyota Technological Institute
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Narayanan Kannan
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Yamaguchi Masafumi
Semiconductor Research Center, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Tokunaga Tomoharu
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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