X-Ray Mask Technology Utilizing an Optical Stepper

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-11-30

著者

• Oizumi H

  Hitachi Ltd. Tokyo Jpn

• Oizumi Hiroaki

  Central Research Laboratory Hitachi Ltd.

• Oizumi H

  Aset Euvl Lab. Kanagawa Jpn

• Oizumi Hiroaki

  Sortec Corporation

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• OGAWA Taro

  Central Research Laboratory, Hitachi Ltd.

• MOCHIJI Kozo

  Central Research Laboratory, Hitachi Ltd.

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• SOGA Takashi

  Central Research Laboratory, Hitachi, Ltd.

• SAITOH Masayoshi

  Central Research Laboratory, Hitachi, Ltd.

• Saitoh Masayoshi

  Central Research Laboratory Hitachi Ltd.

• Ogawa Taro

  Central Research Laboratory Hitachi Ltd.

• Mochiji K

  Joint Res. Center For Atom Technol. Angstrom Technol. Partnership(jrcat‐atp) Ibaraki Jpn

• Mochiji Kozo

  Central Research Laboratory Hitachi Ltd.

• Soga Takashi

  Central Research Laboratory Hitachi Limited

関連論文

• Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
• Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
• Initial Condition and Calculation Method for the Numerical Simulation of LPE
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
• Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
• Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
• Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
• The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
• Functionalized Carbon Nanotubes for Mixed Matrix Membrane
• Polymer Dissolution Characteristics of Radiation-Induced Grafted Resist in X-Ray Lithography
• High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask
• Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
• High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
• Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
• Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
• Electroplated Reflection Masks for Soft X-Ray Projection Lithography
• Resist Performance in 5 nm Soft X-Ray Projection Lithography
• Reduction Imaging at 4.5 nm with Schwarzschild Optics
• Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
• Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
• Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
• Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
• F-K XANES Studies of Alkali Fluorides
• F-K XANES Studies of Alkaline-Earth Fluorides
• Wet-silylation Process for X-ray and EUV Lithographies
• X-Ray Mask Technology Utilizing an Optical Stepper
• Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
• X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
• Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
• New Dry Surface-Imaging Process for X-Ray Lithography
• Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
• Freeze-Drying Process to Avoid Resist Pattern Collapse
• X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
• Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
• Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
• Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
• Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
• Improvement in Field Electron Emission Performance of Natural-Precursor-Grown Carbon Nanofibers by Thermal Annealing in Argon Atmosphere
• Simultaneous Formation of Both Single- and Multi-Wall Carbon Nanotubes by Ultrasonic Spray Pyrolysis
• Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
• Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
• High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
• Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
• Photovoltaic Properties of Bulk Heterojunction Organic Solar Cell Composed of Coumarin 6 Dye as Light Harvester and Donor Material
• Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO_2 Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition
• Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
• Investigations of a Rapid Thermal Annealed Al_Ga_As/Si Structure
• Tilt Deformation of Metalorganic Chemical Vapor Deposition Grown GaP on Si Substrate
• Effects of 1 MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
• Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
• Fabrication of GaAs/Si Tandem Solar Cell by Epitaxial Lift-Off Technique
• First Demonstration of Al_xGa_As/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
• Physical and Microstructural Properties of Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition Grown n-Type Phosphorus Doped Amorphous Carbon Films on the Contribution to Carbon-Based Solar Cells
• Influence of Structure and C60 Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C60 Photovoltaic Devices
• Properties of Pulsed-Laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO2$|$Dye$|$CuI Solid-State Photovoltaic Solar Cells
• Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
• Stress-Free GaAs on Si by Laser Pulse Irradiation
• Fundamental Study on Organic Solar Cells Based on Soluble Zinc Phthalocyanine
• Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
• Ion Implantation Effects of Microcrystalline and Nanocrystalline Diamond Thin Films
• Band Gap Variation of Mn Doped ZnO Films Prepared by Spray Pyrolysis Technique

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