X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
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Oizumi H
Hitachi Ltd. Tokyo Jpn
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Oizumi Hiroaki
Central Research Laboratory Hitachi Ltd.
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Oizumi H
Aset Euvl Lab. Kanagawa Jpn
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Oizumi Hiroaki
Sortec Corporation
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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OGAWA Taro
Central Research Laboratory, Hitachi Ltd.
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MOCHIJI Kozo
Central Research Laboratory, Hitachi Ltd.
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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SOGA Takashi
Central Research Laboratory, Hitachi, Ltd.
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SAITOH Masayoshi
Central Research Laboratory, Hitachi, Ltd.
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SAITHO Masayoshi
Central Research Laboratory, Hitachi, Ltd.
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Saitoh Masayoshi
Central Research Laboratory Hitachi Ltd.
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Ogawa Taro
Central Research Laboratory Hitachi Ltd.
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Mochiji K
Joint Res. Center For Atom Technol. Angstrom Technol. Partnership(jrcat‐atp) Ibaraki Jpn
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Mochiji Kozo
Central Research Laboratory Hitachi Ltd.
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Soga Takashi
Central Research Laboratory Hitachi Limited
関連論文
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- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Initial Condition and Calculation Method for the Numerical Simulation of LPE
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
- Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
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- Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
- The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
- Functionalized Carbon Nanotubes for Mixed Matrix Membrane
- Polymer Dissolution Characteristics of Radiation-Induced Grafted Resist in X-Ray Lithography
- High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask
- Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
- High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
- Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
- Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Resist Performance in 5 nm Soft X-Ray Projection Lithography
- Reduction Imaging at 4.5 nm with Schwarzschild Optics
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
- Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
- F-K XANES Studies of Alkali Fluorides
- F-K XANES Studies of Alkaline-Earth Fluorides
- Wet-silylation Process for X-ray and EUV Lithographies
- X-Ray Mask Technology Utilizing an Optical Stepper
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
- New Dry Surface-Imaging Process for X-Ray Lithography
- Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
- Freeze-Drying Process to Avoid Resist Pattern Collapse
- X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
- Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
- Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
- Improvement in Field Electron Emission Performance of Natural-Precursor-Grown Carbon Nanofibers by Thermal Annealing in Argon Atmosphere
- Simultaneous Formation of Both Single- and Multi-Wall Carbon Nanotubes by Ultrasonic Spray Pyrolysis
- Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
- Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
- High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- Photovoltaic Properties of Bulk Heterojunction Organic Solar Cell Composed of Coumarin 6 Dye as Light Harvester and Donor Material
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- Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
- Investigations of a Rapid Thermal Annealed Al_Ga_As/Si Structure
- Tilt Deformation of Metalorganic Chemical Vapor Deposition Grown GaP on Si Substrate
- Effects of 1 MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
- Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
- Fabrication of GaAs/Si Tandem Solar Cell by Epitaxial Lift-Off Technique
- First Demonstration of Al_xGa_As/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- Physical and Microstructural Properties of Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition Grown n-Type Phosphorus Doped Amorphous Carbon Films on the Contribution to Carbon-Based Solar Cells
- Influence of Structure and C60 Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C60 Photovoltaic Devices
- Properties of Pulsed-Laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO2$|$Dye$|$CuI Solid-State Photovoltaic Solar Cells
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
- Stress-Free GaAs on Si by Laser Pulse Irradiation
- Fundamental Study on Organic Solar Cells Based on Soluble Zinc Phthalocyanine
- Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
- Ion Implantation Effects of Microcrystalline and Nanocrystalline Diamond Thin Films
- Band Gap Variation of Mn Doped ZnO Films Prepared by Spray Pyrolysis Technique