Band Gap Variation of Mn Doped ZnO Films Prepared by Spray Pyrolysis Technique

スポンサーリンク

概要

• 論文の詳細を見る

• Undoped and manganese doped zinc oxide thin films were prepared on Si(100) substrate using spray pyrolysis technique. Nanorods having random distribution were observed on the ZnO films by scanning electron microscopy. Grazing angle X-ray diffraction and Raman spectroscopy confirmed successful growth of the wurtzite structure Zn1-xMnxO films without any secondary phase. From Raman spectra, the lattice defect was found to increase with increasing Mn concentration. The isothermal magnetization hysteresis measurements at room temperature show that saturation of magnetization decreased with increasing Mn concentration. Optical gap energy determined by the optical reflectance measurement showed a maximum at Mn concentration 10 mol %. It was also found that the strain parameter increases up to 10 mol % and then decreases at 15 mol %. These tendencies seem to be related to the coexistence of Mn3+ and Mn4+ (Mn3+/Mn4+) ions along with the Mn2+ ions in the Zn1-xMnxO films.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-06-25

著者

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Jayavel Ramasamy

  Crystal Growth Centre Anna University

• Subramanian Munisamy

  Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Kumar Ganesan

  Centre for Nanoscience and Technology, Anna University, Chennai-600 025, India

• Selvaraj Vijayalakshmi

  Crystal Growth Centre, Anna University, Chennai-600 025, India

• Ilanchezhiyan Pugajendy

  Centre for Nanoscience and Technology, Anna University, Chennai-600 025, India

• Jayavel Ramasamy

  Crystal Growth Centre, Anna University, Chennai-600 025, India

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

関連論文

• Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
• Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
• Atomic Force Microscope Studies on Domain Dynamics in Phosphate Substituted Triglycine Sulfate Single Crystals: Evidence for the Domain Boundary Motion towards Negative Region and Holes Formation at the Domain Boundary
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
• Initial Condition and Calculation Method for the Numerical Simulation of LPE
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
• Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
• The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
• Functionalized Carbon Nanotubes for Mixed Matrix Membrane
• Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
• High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
• Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
• Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• X-Ray Mask Technology Utilizing an Optical Stepper
• Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
• X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
• New Dry Surface-Imaging Process for X-Ray Lithography
• X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
• Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
• Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
• Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
• Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
• Improvement in Field Electron Emission Performance of Natural-Precursor-Grown Carbon Nanofibers by Thermal Annealing in Argon Atmosphere
• Simultaneous Formation of Both Single- and Multi-Wall Carbon Nanotubes by Ultrasonic Spray Pyrolysis
• Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
• Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
• High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
• Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
• Photovoltaic Properties of Bulk Heterojunction Organic Solar Cell Composed of Coumarin 6 Dye as Light Harvester and Donor Material
• Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO_2 Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition
• Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
• Investigations of a Rapid Thermal Annealed Al_Ga_As/Si Structure
• Tilt Deformation of Metalorganic Chemical Vapor Deposition Grown GaP on Si Substrate
• Magnetic Anisotropy of Ni-Doped ZnO Nanocrystalline Thin Films
• Effects of 1 MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
• Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
• Fabrication of GaAs/Si Tandem Solar Cell by Epitaxial Lift-Off Technique
• Optical and Electrical Properties of Nitrogen-Doped Diamond-Like Carbon Films Prepared by a Bipolar-Type Plasma-Based Ion Implantation (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• First Demonstration of Al_xGa_As/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
• Physical and Microstructural Properties of Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition Grown n-Type Phosphorus Doped Amorphous Carbon Films on the Contribution to Carbon-Based Solar Cells
• Influence of Structure and C60 Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C60 Photovoltaic Devices
• Properties of Pulsed-Laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO2$|$Dye$|$CuI Solid-State Photovoltaic Solar Cells
• Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
• Defect Characterization of GaAs on Si Grown by MOCVD
• Stress-Free GaAs on Si by Laser Pulse Irradiation
• Fundamental Study on Organic Solar Cells Based on Soluble Zinc Phthalocyanine
• Raman Spectra and Magnetic Property Analysis of Nd-Doped ZnO Thin Films
• Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
• Ion Implantation Effects of Microcrystalline and Nanocrystalline Diamond Thin Films
• Band Gap Variation of Mn Doped ZnO Films Prepared by Spray Pyrolysis Technique
• Phthalocyanine with Trifluoroethoxy Substituents for Organic Solar Cells
• Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Etch Pit Observation of InP
• Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on $n$-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
• Phthalocyanine with Trifluoroethoxy Substituents for Organic Solar Cells
• Synthesis of Iron Oxide Nanoparticles by Using Eucalyptus Globulus Plant Extract
• Erratum: Synthesis of Iron Oxide Nanoparticles by Using Eucalyptus Globulus Plant Extract [e-J. Surf. Sci. Nanotech. Vol. 12, pp. 363-367 (2014)]

もっと見る 閉じる

スポンサーリンク