Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on $n$-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
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概要
- 論文の詳細を見る
Boron-incorporated hydrogenated amorphous carbon ($a$-C:H) thin film, which is thought to be promising for $p$-type conductivity, on $n$-type Si(100) heterojunction photovoltaic devices has been grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron. In order to identify the effect of boron incorporation, various CH4 partial pressures have been examined. $a$-C:H/$n$-Si heterojunction solar cells with a conversion efficiency as high as 0.04% under 100 mW/cm2 have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-incorporated $a$-C:H film. The photovoltaic properties of the $a$-C:H-based heterojunction solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as the optical properties of boron-incorporated $a$-C:H film. The possibility of improving the conversion efficiency is also discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-15
著者
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hayashi Yasuhiko
Department Of Cardiology Cardiovascular Center Tsuchiya General Hospital
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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Hayashi Yasuhiko
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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