Effects of Al content on Zn0.95Mg0.05O Thin Films Deposited by Sol–Gel Spin Coating

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概要

• 論文の詳細を見る

• Al-doped Zn0.95Mg0.05O films were deposited on glass and silicon substrates by a sol–gel spin coating and the coated samples were dried at 350 to 450 °C and annealed at 550, 650, and 750 °C. The effects of Al content and annealing temperature on the structural and optical properties of Al-doped Zn0.95Mg0.05O thin films were studied. Al-doped Zn0.95Mg0.05O alloy films have a preferred orientation in the (002) direction. By increasing Al content, crystallinity as well as transmittance was decreased. An X-ray photoelectron spectroscopy (XPS) analysis of Al-doped Zn0.95Mg0.05O thin films was performed to determine the chemical state on the surface of the thin films. The resistivities of the thin films were found to increase with increasing Al content and decrease with increasing annealing temperature. For an Al (0.5 wt %)-doped Zn0.95Mg0.05O thin film with a low resistivity of $3.15\times 10^{-2}$ $\Omega$ cm dried at 450 °C and annealed at 750 °C, optical band gap increased from 3.08 to 3.32 eV.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-01-15

著者

• Rusop Mohamad

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Uma Kasimayan

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Soga Tetsuro

  Department Of Neurological Surgery School Of Medicine The University Of Tokushima

• Jimbo Takashi

  Department of Environment Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Rusop Mohamad

  Department of Environment Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Uma Kasimayan

  Department of Environment Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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