Evolution of the Electronic State through the Reduction Annealing in Electron-Doped Pr
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概要
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The evolution of the electronic state through the reduction annealing has been investigated in electron-doped Pr<inf>1.3-x</inf>La<inf>0.7</inf>Ce<inf>x</inf>CuO<inf>4+\delta</inf>(x=0.10) single crystals with the so-called T' structure. From the ab-plane and c-axis electrical resistivity measurements in magnetic fields, it has been found that, through the reduction annealing, the strongly localized state of carriers accompanied by the antiferromagnetic (AF) pseudogap in the as-grown crystal changes to a metallic state bringing about the Kondo effect without AF pseudogap and to a superconducting state. These results are able to be understood in terms of a model based on the strong electron correlation. The complete removal of excess oxygen in the T'-cuprates is expected to result in the appearance of superconductivity in a wide range of the Ce concentration including the parent compound of x=0.
- 2013-06-15
著者
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Koike Yoji
Department Applied Physics Graduate School Of Engineering Tohoku University
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Adachi Tadashi
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Kato Masatsune
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Nishizaki Terukazu
Institute For Materials Research Tohoku University
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Takahashi Akira
Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University
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Kobayashi Norio
Institute For Materials Recearch Tohoku University
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Koike Yoji
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Sasaki Takahiko
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
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Mori Yosuke
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Kobayashi Norio
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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