Two-Dimensional Anderson Localization in Black Phosphorus Crystals Prepaerd by Bismuth-Flux Method

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概要

• 論文の詳細を見る

• The temperature and magnetic field dependence of the electrical resistivity of blackphosphorus single crystals prepared by the bismuth-flux method was measured downto 0.5 K in temperature and up to 6 T in magnetic field. While a typical semiconduct-ing behavior of p-type conduction has been observed above about 10 K, the log 7'-likedependence of the conductivity and the log B dependence of the negativemagnetoresistance have been found below 10 K. Results of the field dependence ofthe magnetoresistance are in good agreement with the theory of the two-dimensionalAnderson Iocalization. The whole results are understood by a model that the 3D holeconduction process in the high temperature region is replaced at about 10 K by a 2Delectron gas confined near the surface.Iblacklconduc- lj tivityNlocalization, ]l inversionlphosphorus, elemental semiconductor, layered maternal, electrical, magnetoresnstance, Anderson localization, two-dirnensuonallayer

• 社団法人日本物理学会の論文
• 1991-11-15

著者

• KOIKE Yoji

  Department of Applied Physics, Graduate School of Engineering, Tohoku University

• 柴田 清孝

  岩手大 工

• BABA Mamoru

  Department of Quantum Science and Energy Engineering, Tohoku University

• Koike Yoji

  Department Applied Physics Graduate School Of Engineering Tohoku University

• Baba M

  Iwate Univ. Morioka

• Baba Mamoru

  Faculty Of Engineering Iwate University

• Baba M

  Department Of Electronic Engineering Faculty Of Engineering Iwate University

• Takeda Y

  Department Of Electronic Engineering Iwate University

• Fukase Tetsuro

  Institute For Materials Research Tohoku University

• Fukase Tetsuo

  Institute For Materials Reserch Tohoku University

• MORITA Akira

  Department of Electronic Engineering,Iwate University

• TAKEDA Yuji

  Department of Immunology and Parasitology, Division of Theoretical Nursing, Yamagata University Scho

• Baba M

  Univ. Tokyo Kashiwa Jpn

• Baba Mamoru

  Department Of Electrical And Electronic Engineering Iwate University

• Funase Tetsuo

  Institute For Material Research Tohoku University

• Fukase T

  Institute For Materials Research Tohoku University

• Morita A

  Department Of Electrical Engineering Faculty Of Engineering University Of Tokyo

• SHIBATA Kiyotaka

  Aomori Polytechnic College

• IZUMIDA Fukunori

  Department of Electronic Engineering,Iwate University

• Izumida Fukunori

  Department Of Electronic Engineering Iwate University

• Shibata K

  Meteorological Research Institute

• Takeda Yuji

  Department Of Immunology And Parasitology Yamagata University School Of Medicine Yamagata

• Morita Akira

  Department Of Basic Science Ishinomaki Senshu University

• SHIBATA Kaoru

  Institute for Materials Research, Tohoku University

• Fukase Tetsuo

  Institute for Materials Research, Tohoku University

• Takeda Yuji

  Department of Electronic Engineering, Faculty of Engineering, Iwate University, Ueda, Morioka 020

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