Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
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概要
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The reduction of the dislocation density in a high-temperature (HT)-Al0.17Ga0.83N epitaxial layer was achieved by a middle-temperature (MT)-intermediate layer technique, in which the HT and the MT were 1050 and 950 °C, respectively. For one set of the MT-intermediate layer, the structure was 4.5-μm-thick HT-Al0.17Ga0.83N/1-μm-thick MT-intermediate layer/100-nm-thick HT-Al0.17Ga0.83N layer/low-temperature (LT)-GaNP buffer/trenched (0001) sapphire. The full-width at half maximum values of (0002) and ($10\bar{1}2$) diffraction peaks of the X-ray diffraction for the Al0.17Ga0.83N epitaxial layer using one set of the MT-intermediate layer were improved to 359 and 486 arcsec compared with 401 and 977 arcsec for the film without the MT-intermediate layer technique, respectively. Transmission electron microscopy result showed that the dislocation density in the Al0.17Ga0.83N film using one set of MT-intermediate layer was reduced from $(1--4)\times 10^{10}$ to $1.7\times 10^{9}$ cm-2. The Al0.17Ga0.83N epitaxial film including two sets of MT-intermediate layers improved the most, showing a dislocation density of $9.3\times 10^{8}$ cm-2.
- 2007-02-15
著者
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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KAWAMICHI Syuichi
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sumiyoshi Kazuhide
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Kataoka Ken
Department Of Cardiology Nagahama City Hospital
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Tsukihara Masashi
Venture Business Laboratory Of Intellectual Property Office The University Of Tokushima
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Okimoto Takashi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Tsukihara Masashi
Venture Business Laboratory of Intellectual Property Office, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Okimoto Takashi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Kawamichi Syuichi
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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